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- * Library of optocoupler models
-
- * Copyright 1989 by MicroSim Corporation
- * Neither this library nor any part may be copied without the express
- * written consent of MicroSim Corporation
-
- * $Revision: 1.3 $
- * $Author: pwt $
- * $Date: 16 Mar 1990 11:02:12 $
-
- * The parameters in this model library were derived from the data sheets for
- * each part.
-
- *.model A4N25
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt A4N25 pin1 pin2 pin4 pin5 pin6 params: rel_CTR=1
- * Motorola pid=4N25
- * 88-01-04 pwt
- * 88-01-18 pwt rework Cje approximation
-
- * The data sheet used for this model is from Motorola: it was the most
- * complete for DC and switching parameters, and is was easy to find the
- * component IR-LED and phototransistor as separate devices for further
- * specifications.
-
- d_MainLED pin1 pin2 MainLED
- d_PhotoLED pin1 1 PhotoLED .001
- v_PhotoLED 1 pin2 0
-
- f_TempComp 0 2 v_PhotoLED 1
- r_TempComp 2 0 TempComp {rel_CTR}
-
- g_BaseSrc 5 6 2 0 .9
- q_PhotoBJT 5 6 4 PhotoBJT
- r_C 5 pin5 .1
- r_B 6 pin6 .1
- r_E 4 pin4 .1
-
- * Since active devices dominate pin-to-pin capacitance on each "side" of the
- * optocoupler, isolation is modeled by identical capacitances and resistances
- * linked to a common point; this gives isolation of .5pF and 1E+11 ohms
- c_1 pin1 7 .4p
- r_1 pin1 7 .12T
- c_2 pin2 7 .4p
- r_2 pin2 7 .12T
- c_4 pin4 7 .4p
- r_4 pin4 7 .12T
- c_5 pin5 7 .4p
- r_5 pin5 7 .12T
- c_6 pin6 7 .4p
- r_6 pin6 7 .12T
-
- * Similar to Motorola MLED15.
- .model MainLED D(Is=1.1p Rs=.66 Ikf=30m N=1.9 Xti=3 Cjo=40p M=.34 Vj=.75
- + Isr=30n Nr=3.8 Bv=6 Ibv=100u Tt=.5u)
-
- * Models photon generation: same as MainLED except no AC effects, no breakdown.
- .model PhotoLED D(Is=1.1p Rs=.66 Ikf=30m N=1.9 Xti=3 Cjo=0 M=.34 Vj=.75
- + Isr=30n Nr=3.8 Bv=0 Tt=0)
-
- * Temperature compensation for system: 1.38x @ -55'C, .54x @ +100'C, all @ 10mA
- * Note: the photo BJT has its own temperature corrections, which must be kept
- * as the transistor is electrically available.
- .model TempComp RES(R=1 Tc1=-11.27m Tc2=43.46u)
-
- * Similar to Motorola MDR3050; Hfe=325 @ Ic=500uA, Vce=5V
- * Use beta variation (w/Parts) to model change in current-transfer ratio (CTR).
- * Hand adjust reverse beta (Br) to match saturation characteristics.
- * Set Isc to model dark current.
- * Hand adjust Cjc to match fall time @ Ic=10mA (which yields rise time, too).
- * Hand adjust reverse transit-time (Tr) to match storage time @ Ic=10mA.
- * Delay time set by LED I-V and C-V characteristics; set Cje to 25% of Cjc,
- * inspection of phototransistor chip layouts show the emitter area is 20%-25%
- * that of the collector area. The same layouts show that base resistance is
- * made negligible by design; also, the operating currents are small.
- * Hand adjust forward transit-time (Tf) to match MDR3050 pulse data. Check
- * against 4N25 frequency response (Fig 11, 12).
- .model PhotoBJT NPN(Is=10f Xti=3 Vaf=60
- + Bf=400 Ne=3.75 Ise=580p Ikf=.26 Xtb=1.5
- + Br=.04 Nc=2 Isc=3.5n
- + Cjc=10p Mjc=.3333 Vjc=.75 Tr=88u
- + Cje=2.5p Mje=.3333 Vje=.75 Tf=1.5n)
- .ends
-
- *.model A4N25A
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt A4N25A pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as 4N25 (UL recognized).
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model A4N26
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt A4N26 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as 4N25, lower isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model A4N27
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt A4N27 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as 4N25, lower CTR, lower isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR=.5
- .ends
-
- *.model A4N28
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt A4N28 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as 4N25, lower CTR, lower isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25 params: rel_CTR=.5
- .ends
-
- *.model H11A2
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt H11A2 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Every manufacturer seems to use their own 4N25 as an equivalent device.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model H11A3
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt H11A3 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as H11A2, higher isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model H11A4
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt H11A4 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Every manufacturer seems to use their own 4N27 as an equivalent device.
- x1 pin1 pin2 pin4 pin5 pin6 A4N27
- .ends
-
- *.model H11A520
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt H11A520 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as H11A2, higher isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model MCT2
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt MCT2 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Every manufacturer seems to use their own 4N25 as an equivalent to the
- * General Instruments device.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model MCT2E
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt MCT2E pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Same as MTC2E, higher isolation breakdown voltage.
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model MOC1005
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt MOC1005 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Motorola equivalent of 4N25
- x1 pin1 pin2 pin4 pin5 pin6 A4N25
- .ends
-
- *.model MOC1006
- * 6-pin DIP: pin #1 #2 #4 #5 #6
- * | | | | |
- .subckt MOC1006 pin1 pin2 pin4 pin5 pin6
- * 88-01-05 pwt
- * Motorola equivalent of 4N27
- x1 pin1 pin2 pin4 pin5 pin6 A4N27
- .ends