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- From: whit@carson.u.washington.edu (John Whitmore)
- Newsgroups: sci.electronics
- Subject: Re: Voltage drop across 1N4148 diode?
- Date: 23 Jan 1993 00:27:33 GMT
- Organization: University of Washington, Seattle
- Lines: 20
- Message-ID: <1jq3dlINNp2f@shelley.u.washington.edu>
- References: <4u8lJfA3SL@tron.gun.de> <1993Jan21.101200.8651@mr.med.ge.com>
- NNTP-Posting-Host: carson.u.washington.edu
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- In article <1993Jan21.101200.8651@mr.med.ge.com> szopinsk@picard.med.ge.com (Jerry Szopinski Mfg 4-6983) writes:
-
- >The voltage drop across the 1N4148 diode depends on what type of
- >semiconductor material it is made of. If the diode is made of
- >germanium (no, not the flowers) the drop is around 0.7V; if it
- >is made of silicon then the drop is around 0.5V.
-
- Nope; for Ge diodes 0.2-0.3V is typical. Silicon is nominally
- 0.6-0.7 (but this ignores resistance, which can drive either Si or
- Ge devices to 1V or more). There are, for applications where this
- voltage drop is inconvenient, Schottky rectifiers that use Si and
- metal (Pt is typical) instead of N-Si and P-Si, and the forward
- voltage drop of these Schottky devices is usually considerably
- lower (0.3V or so). Reverse holdoff voltages for Schottky diodes
- are usually modest (35V or so), which limits their application.
-
- LEDs are made of materials that have forward drops ranging
- from 1.2V (for IR) to 2.4V (the blue LEDs).
-
- John Whitmore
-