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- Page 1
- 01-01-80
- 00:05:05
- D Line# 1 7 Microsoft FORTRAN77 V3.31 August 1985
- 1 C
- 2 C OPTOSC PROGRAM (OPTIMUM OSCILLATOR)
- 3 C
- 4 C COMPUTATION OF THE OPTIMAL NETWORK FOR A
- 5 C TRANSISTORIZED WITH OR WITHOUT DIELECTRIC RESONATOR.
- 6 C
- 7 C
- 8 C PROGRAM BY: PATRICK CHAMPAGNE
- 9 C DEFENSE COMMUNICATIONS DIVISION
- 10 C CANADIAN MARCONI COMPANY
- 11 C 2442 TRENTON, MONTREAL, QUEBEC, CANADA
- 12 C
- 13 C 2 POSSIBLE OSCILLATION CONDITIONS ARE ANALYZED:
- 14 C A) TRANSISTOR POTENTIALLY UNSTABLE
- 15 C B) TRANSISTOR UNCONDITIONNALLY STABLE (THE COMPUTATION OF
- 16 C THE OPTIMUM NETWORK FOR NEGATIVE CONDUCTANCE IS BASED ON
- 17 C R.SPENCE'S "LINEAR ACTIVE NETWORKS")
- 18 C
- 19 C
- 20 C THE FOLLOWING PARAMETERS ARE USED IN THE PROGRAM:
- 21 C Sij :S PARAMETERS OF THE TRANSISTOR
- 22 C Yij :Y PARAMETERS OF THE TRANSISTOR
- 23 C EEFF :EFFECTIVE DIELECTRIC CONSTANT OF MICROSTRIP
- 24 C WL :WAVELENGTH
- 25 C BGi :FEEDBACK SUSCEPTANCE FOR MAX. NEG. CONDUCTANCE
- 26 C GNi :MAXIMUM NEGATIVE CONDUCTANCES
- 27 C ZIN :RESONATOR IMPEDANCE AS SEEN BY TRANSISTOR
- 28 C XIN :RESONATOR ADMITTANCE AS SEEN BY TRANSISTOR
- 29 C B0 :TRANSISTOR OUTPUT SUSCEPTANCE
- 30 C XM(i,j):INDEFINITE ADMITTANCE MATRIX
- 31 C YE,Y0,
- 32 C YC,YB :TRANSISTOR ADMITTANCES
- 33 C
- 34 $DEBUG
- 35 COMPLEX S11,S21,S12,S22,Y11,Y12,Y21,Y22,Y1,Y2,Y3,Y4,DEL
- 36 COMPLEX XM(3,3),D,YE,YB,YC,Y0,GM,ZIN,XIN
- 37 CHARACTER*10 AA
- 38 WRITE(*,3)
- 39 OPEN(6,FILE='PRN',STATUS='OLD')
- 40 WRITE(6,700)
- 41 700 FORMAT(' *****************************************************')
- 42 WRITE(6,710)
- 43 710 FORMAT(' * *')
- 44 WRITE(6,3)
- 45 3 FORMAT(' * COMPUTATION OF TRANSISTORIZED OSCILLATORS * ')
- 46 WRITE(6,710)
- 47 WRITE(6,700)
- 48 WRITE(*,7)
- 49 7 FORMAT(1H0,'TRANSISTOR TYPE?')
- 50 READ(*,9)AA
- 51 9 FORMAT(A)
- 52 WRITE(*,11)AA
- 53 WRITE(6,11)AA
- 54 11 FORMAT(1H0,'THE TRANSISTOR USED IS ',A)
- 55 WRITE(*,13)
- 56 13 FORMAT(1H0,'BIAS CONDITIONS (VCE,IC) OR (VDS,ID)?')
- Page 2
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- D Line# 1 7 Microsoft FORTRAN77 V3.31 August 1985
- 57 READ(*,17)VCE,AIC
- 58 17 FORMAT(2F6.3)
- 59 WRITE(6,19)
- 60 19 FORMAT(1H0,'BIAS CONDITIONS')
- 61 WRITE(6,21)VCE,AIC
- 62 21 FORMAT(1H0,'VCE(VDS)=',F6.3,'V',3X,'IC(ID)=',F6.3,'MA')
- 63 WRITE(*,61)
- 64 61 FORMAT(1H0,'OPERATING FREQUENCY (IN GHZ)')
- 65 READ (*,62) FREQ
- 66 62 FORMAT(F6.3)
- 67 WRITE(*,63) FREQ
- 68 WRITE(6,63) FREQ
- 69 63 FORMAT(1H0,'THE OPERATING FREQUENCY IS ',F6.3,' GHZ')
- 70 C
- 71 C THE COMPUTATION OF THE EFFECTIVE DIELECTRIC CONSTANT IS BASED
- 72 C ON EDWARDS' 'FOUNDATIONS FOR MICROSTRIP DESIGN'
- 73 C
- 74 T1=0.43*FREQ**2-0.009*FREQ**3
- 75 T2=(.635/50)**1.33
- 76 T1=1+T1*T2
- 77 C
- 78 C E EFF. =6.53 IS USED FOR F=0
- 79 C
- 80 T1=(9.8-6.53)/T1
- 81 EEFF=9.8-T1
- 82 WL=298/(FREQ*EEFF**.5)
- 83
- 84 WRITE(6,96)WL
- 85 96 FORMAT(1H0,'THE WAVELENGTH IS ',F6.3,' MM')
- 86 C
- 87 C THE TRANSISTOR CONFIGURATION CORRESPOND TO THE CONDITION
- 88 C FOR WHICH THE S-PARAMETERS ARE GIVEN
- 89 C
- 90 WRITE(6,10)
- 91 WRITE(*,10)
- 92 10 FORMAT(1H0,'TRANSISTOR CONFIGURATION')
- 93 WRITE(*,12)
- 94 WRITE(6,12)
- 95 12 FORMAT(1H0,'1=CB,CG; 2=CE,CS; 3=CC,CD')
- 96 READ(*,23) ICONF
- 97 23 FORMAT(I2)
- 98 WRITE(6,14) ICONF
- 99 14 FORMAT(1H0,10X,I2)
- 100 C
- 101 C S PARAMETERS READING
- 102 C
- 103 WRITE(*,15)
- 104 WRITE(6,15)
- 105 15 FORMAT(1H0,'S11:AMPLITUDE AND PHASE (DEGREES)')
- 106 READ(*,5) P11
- 107 READ(*,5) ARG11
- 108 WRITE(6,27)P11,ARG11
- 109 27 FORMAT(1H0,5X,2(F8.3,5X))
- 110 WRITE(*,20)
- 111 WRITE(6,20)
- 112 20 FORMAT(1H0,'S21:AMPLITUDE AND PHASE')
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- 113 READ(*,5) P21
- 114 READ(*,5) ARG21
- 115 WRITE(6,27) P21,ARG21
- 116 WRITE(*,25)
- 117 WRITE(6,25)
- 118 25 FORMAT(1H0,'S12:AMPLITUDE AND PHASE')
- 119 READ(*,5) P12
- 120 READ(*,5) ARG12
- 121 WRITE(6,27) P12,ARG12
- 122 WRITE(*,30)
- 123 WRITE(6,30)
- 124 30 FORMAT(1H0,'S22:AMPLITUDE AND PHASE')
- 125 READ(*,5) P22
- 126 READ(*,5) ARG22
- 127 WRITE(6,27) P22,ARG22
- 128 5 FORMAT (F8.3)
- 129 C
- 130 C TRANSFORMATION OF ANGLES FROM DEGREES TO RADIANS
- 131 C
- 132 XPI=3.1416/180
- 133 ARG11=ARG11*XPI
- 134 ARG21=ARG21*XPI
- 135 ARG12=ARG12*XPI
- 136 ARG22=ARG22*XPI
- 137 C
- 138 C COMPLEX S PARAMETERS
- 139 C
- 140 S11=CMPLX(P11*COS(ARG11),P11*SIN(ARG11))
- 141 S21=CMPLX(P21*COS(ARG21),P21*SIN(ARG21))
- 142 S12=CMPLX(P12*COS(ARG12),P12*SIN(ARG12))
- 143 S22=CMPLX(P22*COS(ARG22),P22*SIN(ARG22))
- 144 C
- 145 C ROLLETT STABILITY FACTOR
- 146 C
- 147 DEL=S11*S22-S12*S21
- 148 FS=1+CABS(DEL)**2-CABS(S11)**2-CABS(S22)**2
- 149 FS=FS/(2*CABS(S21)*CABS(S12))
- 150 WRITE(*,32) FS
- 151 WRITE(6,32) FS
- 152 32 FORMAT(1H0,'STABILITY FACTOR K=',F8.3,)
- 153 C
- 154 C K >= TO 1 CORRSPONDS TO UNCONDITIONNALLY STABLE
- 155 C
- 156 C Y PARAMETERS
- 157 C
- 158 D=(1+S11)*(1+S22)-S12*S21
- 159 Y11=((1+S22)*(1-S11)+S12*S21)/D
- 160 Y12=-(2*S12)/D
- 161 Y21=-(2*S21)/D
- 162 Y22=((1+S11)*(1-S22)+S12*S21)/D
- 163 WRITE(*,35) Y11
- 164 WRITE(6,35) Y11
- 165 35 FORMAT(///,1H0,'Y11=',2(F8.3,3X))
- 166 WRITE(*,40) Y12
- 167 WRITE(6,40) Y12
- 168 40 FORMAT(1H0,'Y12=',2(F8.3,3X))
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- 169 WRITE(*,45) Y21
- 170 WRITE(6,45) Y21
- 171 45 FORMAT(1H0,'Y21=',2(F8.3,3X))
- 172 WRITE(*,50) Y22
- 173 WRITE(6,50) Y22
- 174 50 FORMAT(1H0,'Y22=',2(F8.3,3X))
- 175 C
- 176 C IF THE TRANSISTOR IS POTENTIALLY UNSTABLE, THE SERIES FEEDBACK
- 177 C NETWORK (CONTAINING ONLY ONE SUSCEPTANCE), WHICH MAXIMIZES THE
- 178 C NEGATIVE CONDUCTANCE, IS CALCULATED.
- 179 C
- 180 IF (FS.GE.1)GOTO 200
- 181 WRITE(*,52)
- 182 WRITE(6,52)
- 183 52 FORMAT(1H0,'ONE SUSCEPTANCE NETWORK CALCULATION')
- 184 G11=REAL(Y11)
- 185 G22=REAL(Y22)
- 186 B11=AIMAG(Y11)
- 187 B22=AIMAG(Y22)
- 188 YM=REAL(Y12*Y21)
- 189 YL=CABS(Y12*Y21)
- 190 YI=AIMAG(Y12*Y21)
- 191 C
- 192 C 2 SOLUTIONS ARE POSSIBLE FOR SERIES FEEDBACK SUSCEPTANCE.
- 193 C FOR EACH OF THE SOLUTIONS, THE NEGATIVE CONDACTANCE IS
- 194 C COMPUTED AND THE LARGEST VALUE WILL BE USED.
- 195 C
- 196 C THE COMPUTATION IS DONE FOR BOTH POSSIBLE OUTPUT PORT.
- 197 C THE USER MUST DECIDE, BASED ONT THESE RESULTS, WHICH WILL
- 198 C THE CHOSEN CONFIGURATION.
- 199 C
- 200 BG1=-B11+(G11*YI)/(YM+YL)
- 201 Y1=CMPLX(0.,BG1)
- 202 GN1=G22-(YM+YL)/(2*G11)
- 203 BG2=-B11+(G11*YI)/(YM-YL)
- 204 Y2=CMPLX(0.,BG2)
- 205 GN2=G22-(YM-YL)/(2*G11)
- 206 WRITE(*,60)GN1,GN2
- 207 WRITE(6,60)GN1,GN2
- 208 60 FORMAT(1H0,'NEG. CONDUCTANCES :GN1= ',F8.3,' GN2=',F8.3)
- 209 IF(GN1.LE.GN2)GOTO 65
- 210 WRITE(*,70)
- 211 WRITE(6,70)
- 212 70 FORMAT(1H0,'GN2 MORE NEG. THAN GN1, GNMAX=GN2')
- 213 80 GNMAX=GN2
- 214 BG=BG2
- 215 GOTO 85
- 216 65 WRITE(*,90)
- 217 WRITE(6,90)
- 218 90 FORMAT(1H0,'GN1 MORE NEG. THAN GN2, GNMAX=GN1')
- 219 75 GNMAX=GN1
- 220 BG=BG1
- 221 85 WRITE(*,95)
- 222 WRITE(6,95)
- 223 95 FORMAT(1H0,'CIRCUIT PARAMETERS FOR AN OUTPUT ON PORT 2')
- 224 B0=B22-AIMAG((Y12*Y21)/(Y11+CMPLX(0.,BG)))
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- 225 WRITE(*,100) GNMAX,BG,B0
- 226 WRITE(6,100) GNMAX,BG,B0
- 227 C
- 228 C COMPUTATION OF THE DISTANCE BETWEEN DR AND TRANSISTOR.
- 229 C AN ALUMINA WITH 50OHMS LINES IS ASSUMED.
- 230 C
- 231 100 FORMAT(1H0,5X,'GNMAX=',F8.3,' BG=',F8.3,' B0=',F8.3)
- 232 DIST=ATAN(BG)
- 233 IF (DIST.GE.0.0)GOTO 102
- 234 DIST=DIST+3.1416
- 235 102 DIST=DIST*WL/6.2832
- 236 WRITE(*,97)DIST
- 237 WRITE(6,97)DIST
- 238 97 FORMAT(1H0,'THE DISTANCE BETWEEN DR AND TRANS.=',F6.3,' MM')
- 239 C
- 240 C COMPUTATION OF OUTPUT ADMITTANCES FOR REAL DR
- 241 C
- 242 WRITE(6,620)
- 243 WRITE(*,620)
- 244 620 FORMAT(/,1H0,'ADMITTANCES WITH REAL DR')
- 245 WRITE(*,800)
- 246 800 FORMAT(1H0,' ENTER S11 MAX, S11 MIN AND # OF COMPUTATIONS')
- 247 READ (*,810) CLIM1,CLIM2,M
- 248 810 FORMAT(2F6.3,I2)
- 249 DRHO=(CLIM1-CLIM2)/M
- 250 M=M+1
- 251 DO 820 I=1,M
- 1 252 RHO=CLIM2+DRHO*(I-1)
- 1 253 RES=(((100*RHO)/(1-RHO))+50.)/50.
- 1 254 ZIN=RES+CMPLX(0.,1.)*TAN(DIST*6.2832/WL)
- 1 255 ZIN=ZIN/(1+CMPLX(0.,RES)*TAN(DIST*6.2832/WL))
- 1 256 XIN=1/ZIN
- 1 257 BOUT=B22-AIMAG((Y12*Y21)/(Y11+XIN))
- 1 258 GNEG=G22-REAL((Y12*Y21)/(Y11+XIN))
- 1 259 WRITE(*,630)RHO,GNEG,BOUT
- 1 260 WRITE(6,630)RHO,GNEG,BOUT
- 1 261 630 FORMAT(/,' RHO=',F6.3,3X,'GNEG=',F6.3,3X,'BOUT=',F6.3)
- 1 262 WRITE(6,615)ZIN,XIN
- 1 263 615 FORMAT(' ZIN=',2F6.3,5X,'XIN=',2F6.3)
- 1 264 820 CONTINUE
- 265 880 WRITE(*,850)
- 266 850 FORMAT(1H0,'ENTER S11 AND DIST(MM),(S11<0 ==>FIN)')
- 267 READ (*,825) RHO,DIST
- 268 825 FORMAT(2F6.3)
- 269 IF (RHO.LT.0)GOTO 900
- 270 RES=(((100*RHO)/(1-RHO))+50.)/50.
- 271 ZIN=RES+CMPLX(0.,1.)*TAN(DIST*6.2832/WL)
- 272 ZIN=ZIN/(1+CMPLX(0.,RES)*TAN(DIST*6.2832/WL))
- 273 XIN=1/ZIN
- 274 BOUT=B22-AIMAG((Y12*Y21)/(Y11+XIN))
- 275 GNEG=G22-REAL((Y12*Y21)/(Y11+XIN))
- 276 WRITE(*,630)RHO,GNEG,BOUT
- 277 WRITE(6,630)RHO,GNEG,BOUT
- 278 WRITE(6,890)ZIN,XIN,DIST
- 279 890 FORMAT(' ZIN=',2F6.3,5X,'XIN=',2F6.3,3X,'DIST=',F6.3)
- 280 GOTO 880
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- 281 900 BG3=-B22+(G22*YI)/(YM+YL)
- 282 Y3=CMPLX(0.,BG3)
- 283 GN3=G11-(YM+YL)/(2*G22)
- 284 BG4=-B22+(G22*YI)/(YM-YL)
- 285 Y4=CMPLX(0.,BG4)
- 286 GN4=G11-(YM-YL)/(2*G22)
- 287 WRITE(*,105)GN3,GN4
- 288 WRITE(6,105)GN3,GN4
- 289 105 FORMAT(///,1H0,'NEGATIVE CONDUCTANCES: GN3=',F8.3,5X,'GN4=',F8.3)
- 290 IF(GN3.LE.GN4)GOTO 120
- 291 WRITE(*,110)
- 292 WRITE(6,110)
- 293 110 FORMAT(1H0,'GN4 MORE NEG. THAN GN3, GNMAX=GN4')
- 294 115 GNMAXA=GN4
- 295 BGA=BG4
- 296 GOTO 135
- 297 120 WRITE(*,125)
- 298 WRITE(6,125)
- 299 125 FORMAT(1H0,'GN3 MORE NEG. THAN GN4, GNMAX=GN3')
- 300 130 GNMAXA=GN3
- 301 BGA=BG3
- 302 135 WRITE(*,140)
- 303 WRITE(6,140)
- 304 140 FORMAT(1H0,'CIRCUIT PARAMETERS FOR AN OUTPUT ON PORT 1')
- 305 B0A=B11-AIMAG((Y12*Y21)/(Y22+CMPLX(0.,BGA)))
- 306 WRITE(*,100) GNMAXA,BGA,B0A
- 307 WRITE(6,100) GNMAXA,BGA,B0A
- 308 DIST=ATAN(BGA)
- 309 IF (DIST.GE.0.0) GOTO 103
- 310 DIST=DIST+3.1416
- 311 103 DIST=DIST*WL/6.2832
- 312 WRITE(*,142)DIST
- 313 WRITE(6,142)DIST
- 314 142 FORMAT(1H0,'THE DISTANCE BETWEEN DR AND TRANS.=',F6.3,' MM')
- 315 WRITE(6,620)
- 316 WRITE(*,620)
- 317 WRITE(*,800)
- 318 READ (*,810) CLIM1,CLIM2,M
- 319 DRHO=(CLIM1-CLIM2)/M
- 320 M=M+1
- 321 DO 920 I=1,M
- 1 322 RHO=CLIM2+DRHO*(I-1)
- 1 323 RES=(((100*RHO)/(1-RHO))+50.)/50.
- 1 324 ZIN=RES+CMPLX(0.,1.)*TAN(DIST*6.2832/WL)
- 1 325 ZIN=ZIN/(1+CMPLX(0.,RES)*TAN(DIST*6.2832/WL))
- 1 326 XIN=1/ZIN
- 1 327 BOUT=B11-AIMAG((Y12*Y21)/(Y22+XIN))
- 1 328 GNEG=G11-REAL((Y12*Y21)/(Y22+XIN))
- 1 329 WRITE(*,630)RHO,GNEG,BOUT
- 1 330 WRITE(6,630)RHO,GNEG,BOUT
- 1 331 WRITE(6,615)ZIN,XIN
- 1 332 920 CONTINUE
- 333 1010 WRITE(*,850)
- 334 READ (*,825) RHO,DIST
- 335 IF(RHO.LT.0)GOTO 200
- 336 RES=(((100*RHO)/(1-RHO))+50.)/50.
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- 337 ZIN=RES+CMPLX(0.,1.)*TAN(DIST*6.2832/WL)
- 338 ZIN=ZIN/(1+CMPLX(0.,RES)*TAN(DIST*6.2832/WL))
- 339 XIN=1/ZIN
- 340 BOUT=B11-AIMAG((Y12*Y21)/(Y22+XIN))
- 341 GNEG=G11-REAL((Y12*Y21)/(Y22+XIN))
- 342 WRITE(*,630)RHO,GNEG,BOUT
- 343 WRITE(6,630)RHO,GNEG,BOUT
- 344 WRITE(6,890)ZIN,XIN,DIST
- 345 GOTO 1010
- 346 200 WRITE(*,150)
- 347 IF(FS.LT.1) GOTO 500
- 348 WRITE(6,150)
- 349 150 FORMAT(///,1H0,'THREE ADMITTANCES NETWORK CALCULATION')
- 350 IF(ICONF-2)205,215,225
- 351 C
- 352 C THE ANALYSIS IS BASED ON SMALL-SIGNAL S-PARAMETERS. THE NETWORK
- 353 C CONSISTING OF THREE ADMITTANCES WHICH LEADS TO A MAXIMUM
- 354 C LOADING OSCILLATOR IS COMPUTED. EACH OF THE THREE POSSIBLE OUTPUT
- 355 C PORTS IS CONSIDERED.
- 356 C
- 357 205 XM(1,1)=Y11
- 358 XM(3,1)=Y21
- 359 XM(2,1)=-(Y11+Y21)
- 360 XM(1,3)=Y12
- 361 XM(1,2)=-(Y12+Y11)
- 362 XM(3,3)=Y22
- 363 XM(2,3)=-(Y22+Y12)
- 364 XM(3,2)=-(Y22+Y21)
- 365 XM(2,2)=-(XM(3,2)+XM(1,2))
- 366 WRITE(*,210)
- 367 WRITE(6,210)
- 368 210 FORMAT(1H0,15X,'Y(I,J) MATRIX FROM CB OR CG')
- 369 GOTO 235
- 370 215 XM(2,2)=Y11
- 371 XM(2,3)=Y12
- 372 XM(3,2)=Y21
- 373 XM(3,3)=Y22
- 374 XM(2,1)=-(Y11+Y12)
- 375 XM(3,1)=-(Y21+Y22)
- 376 XM(1,2)=-(Y11+Y21)
- 377 XM(1,3)=-(Y12+Y22)
- 378 XM(1,1)=-(XM(1,2)+XM(1,3))
- 379 WRITE(*,220)
- 380 WRITE(6,220)
- 381 220 FORMAT(1H0,15X,'Y(I,J) MATRIX FROM CE OR CS')
- 382 GOTO 235
- 383 225 XM(1,1)=Y22
- 384 XM(1,2)=Y21
- 385 XM(2,1)=Y12
- 386 XM(2,2)=Y11
- 387 XM(1,3)=-(Y22+Y21)
- 388 XM(2,3)=-(Y12+Y11)
- 389 XM(3,1)=-(Y22+Y12)
- 390 XM(3,2)=-(Y21+Y11)
- 391 XM(3,3)=-(XM(3,1)+XM(3,2))
- 392 WRITE(*,230)
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- 393 WRITE(6,230)
- 394 230 FORMAT(1H0,15X,'Y(I,J) MATRIX FROM CC OR CD')
- 395 235 DO 240 I=1,3
- 1 396 WRITE(*,245)(XM(I,J),J=1,3)
- 1 397 WRITE(6,245)(XM(I,J),J=1,3)
- 1 398 245 FORMAT(1H0,3(4X,2(F8.3)))
- 1 399 240 CONTINUE
- 400 GM=(1/3)*(REAL(XM(1,1))+REAL(XM(2,2))+REAL(XM(3,3)))
- 401 IF (CABS(GM).GE.0) GOTO 250
- 402 WRITE(*,255)
- 403 WRITE(6,255)
- 404 255 FORMAT(1H0,2X,'AVERAGE AUTO-CONDUCTANCE <0, INACTIVE DEVICE')
- 405 GOTO 500
- 406 250 YE=0.5*(XM(2,2)+XM(3,3)-XM(1,1))
- 407 YB=0.5*(XM(3,3)+XM(1,1)-XM(2,2))
- 408 YC=0.5*(XM(1,1)+XM(2,2)-XM(3,3))
- 409 Y0=0.5*(XM(1,2)-XM(2,1))
- 410 T=AIMAG(Y0)**2
- 411 T=T-(REAL(YE)*REAL(YB)+REAL(YB)*REAL(YC)+REAL(YC)*REAL(YE))
- 412 C
- 413 C BASE NETWORK
- 414 C
- 415 XF=REAL(Y0)/AIMAG(Y0)
- 416 WRITE(*,265)
- 417 WRITE(6,265)
- 418 265 FORMAT(//,1H0,'BASE SUSCEPTANCES OF THE NETWORK')
- 419 BBC=-XF*REAL(YE)-AIMAG(YE)
- 420 BEC=-XF*REAL(YB)-AIMAG(YB)
- 421 BEB=-XF*REAL(YC)-AIMAG(YC)
- 422 WRITE(*,270)BBC
- 423 WRITE(6,270)BBC
- 424 270 FORMAT(//,1H0,'BBC=',2X,F8.3)
- 425 WRITE(*,280)BEC
- 426 WRITE(6,280)BEC
- 427 280 FORMAT(1H0,'BEC=',2X,F8.3)
- 428 WRITE(*,290)BEB
- 429 WRITE(6,290)BEB
- 430 290 FORMAT(1H0,'BEB=',2X,F8.3)
- 431 C
- 432 C COMPUTATION OF SUSCEPTANCE TO BE ADDED IN
- 433 C PARALL WITH MAXIMUM LOAD
- 434 C
- 435 WRITE(6,260)
- 436