Semiconductors

Storage No.ItemRemarksPriceCompartment

N-2-1-1Germanium(Ge)Specific resistance:15ohmcm75,000/kg20
Sb-concentration:3x1014/cm3
2Silicon(Si)Specific resistance of epitaxial1,763/sheet20
layer:3.5~5.0ohmcm(P-doped N-type)
Specific resistance of substrate:
0.02ohmcm(Sb-doped N-type)
3Cadmium sulfide(CdS) 5,000/g20(S)
4Gallium arsenide(GaAs) 8,000/g20(S)
5Gallium phosphide(GaP) 100,000/g20(S)
6Zinc telluride(ZnTe)Specific resistance:45 ohmcm150,000/g20(S)
Mobility:140cm2/Vs
Impurity concentration:1x1015/cm3