Semiconductors |
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Storage No. | Item | Remarks | Price | Compartment |
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N-2-1-1 | Germanium(Ge) | Specific resistance:15ohmcm | 75,000/kg | 20 |
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| | Sb-concentration:3x1014/cm3 | | |
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2 | Silicon(Si) | Specific resistance of epitaxial | 1,763/sheet | 20 |
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| | layer:3.5~5.0ohmcm(P-doped N-type) | | |
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| | Specific resistance of substrate: | | |
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| | 0.02ohmcm(Sb-doped N-type) | | |
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3 | Cadmium sulfide(CdS) | | 5,000/g | 20(S) |
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4 | Gallium arsenide(GaAs) | | 8,000/g | 20(S) |
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5 | Gallium phosphide(GaP) | | 100,000/g | 20(S) |
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6 | Zinc telluride(ZnTe) | Specific resistance:45 ohmcm | 150,000/g | 20(S) |
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| | Mobility:140cm2/Vs | | |
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| | Impurity concentration:1x1015/cm3 | | |
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