Semi-Conductor Elements |
---|
|
---|
Storage No. | Item | Remarks | Price | Compartment |
|
---|
N-5-1-1 | MOS tetrode transistor | 3SK-39 | 130/each | 20 |
2 | High-voltage silicon | 2SD246 | 750/each | 20 |
| power transistor | | | |
3 | IC | AN201 TV deflection tungle circuit | 400/each | 20 |
| | AN205 TV video signal processing circuit | 500/each | 20 |
| | AN206 FM IF and IF pre-amplifier | 285/each | 20 |
4 | LSI | LS-2011 2,560-bit read-only memory | 25,600/each | 20 |
5 | Cadmium-sulfide | | 300/each | 20(S) |
| photoconductor cell | | | |
6 | Electro-luminescent | Pholsicon | 50,000/each | 20 |
| panel | | | |
7 | Magnetron | 2M88;2,450MHz,800W output power | 120,000/each | 20 |
8 | Video camera tube | Plumbicon 16XQ | 650,000/each | 11(S) |
9 | Miniature condenser | WM-911 | 40,000/each | 20 |
| microphone(*) | | | |
10 | [Matsushita | Catalogue of semi-conductors,cathode | | 20 |
| Electronics] | ray tubes and electron tubes | | |
11 | Etched silicon plate | Photo-etched message(extract from Item | | 29 |
| | M-6-1-6)using techniques developed | | |
| | in the manufacture of large scale | | |
| | integrated circuits(LSI) | | |
|
---|