Special Semi-Conductor Elements Developed by Matsushita Electric Industrial Company |
---|
|
---|
Storage No. | Item | Remarks | Compartment |
---|
|
---|
N-5-2-1 | UHF mixer | Silicon molybdenum Shottky diode MA433 | 20 |
---|
2 | Microwave oscillator | GMO diode | 20 |
---|
3 | Pressure-sensitive device | MPS diode | 20 |
---|
4 | Pressure-sensitive | PSS switching device | 20 |
---|
| swithching device | | |
---|
N-5-2-5 | Pressure-sensitive transistor | PSS transistor | 20 |
---|
6 | Pressure-sensitive thin film | SFT:pressure sensitive | 20 |
---|
| semi-conductor resistor | | |
---|
7 | Voltage-dependent capacitor | MOS varactor diode MK9910 | 20 |
---|
8 | Voltage-dependent resistor | ZnO as main ingredient(ZNR) | 20 |
---|
9 | Voltage-dependent resistor | Barium titanate as main ingredient(Bariatite) | 20 |
---|
10 | PTC resistor | Ceramic resistor with positive thermal | 20 |
---|
| | coefficient of resistance(Hiceramistor) | |
---|
11 | Plastic thermistor | | 20(S) |
---|
12 | Thermo-luminescence dosimeter | | 20 |
---|
13 | Solar battery of sintered CdS | Sunceram | 13(S) |
---|
14 | Thin film photo-voltaic cell | | 20 |
---|
|
---|